Extremely low excess noise avalanche photodiode with GaAsSb absorption region and AlGaAsSb avalanche region

An extremely low noise Separate Absorption and Multiplication Avalanche Photodiode (SAM-APD), consisting of a GaAs 0.52 Sb 0.48 absorption region an Al 0.85 Ga 0.15 As 0.56 0.44 avalanche region, is reported. The device incorporated appropriate doping profile to suppress tunneling current from the achieving large gain, ?130 at room temperature. It exhibits excess factors 1.52 2.48 gain 10 20, respectively. At our measured factor more than three times lower that in commercial InGaAs/InP SAM-APD. These results are corroborated by Simple Monte Carlo simulation. Our demonstrate potential performance /Al photodiodes.